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STPSC30G12 - 30A power Schottky high surge silicon carbide diode

Description

The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier.

It is manufactured using a silicon carbide substrate.

The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.

Features

  • None or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • Robust high voltage periphery.
  • Operating Tj from -55 °C to 175 °C.
  • Avalanche energy rated.
  • ECOPACK2 compliant component.

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Datasheet preview – STPSC30G12

Datasheet Details

Part number STPSC30G12
Manufacturer STMicroelectronics
File Size 486.61 KB
Description 30A power Schottky high surge silicon carbide diode
Datasheet download datasheet STPSC30G12 Datasheet
Additional preview pages of the STPSC30G12 datasheet.

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Full PDF Text Transcription

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STPSC30G12 Datasheet 1200 V, 30 A power Schottky high surge silicon carbide diode A K K A K DO-247 LL Product label Features • None or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • Operating Tj from -55 °C to 175 °C • Avalanche energy rated • ECOPACK2 compliant component Applications • Solar inverter • Boost PFC • Air conditioning equipment • UPS power supply • Telecom / Server power equipment • HEV/EV OBC (On board battery chargers) • EV Charging station Description The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate.
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