Datasheet4U Logo Datasheet4U.com

STPSC20H065C - power Schottky silicon carbide diode

Description

The SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Features

  • No or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • Dedicated to PFC.

📥 Download Datasheet

Datasheet preview – STPSC20H065C

Datasheet Details

Part number STPSC20H065C
Manufacturer STMicroelectronics
File Size 164.82 KB
Description power Schottky silicon carbide diode
Datasheet download datasheet STPSC20H065C Datasheet
Additional preview pages of the STPSC20H065C datasheet.

📁 Similar Datasheet

  • STPSC1006 - Schottky silicon carbide diode (ST Microelectronics)
  • STPSC1206 - 600V power Schottky silicon carbide diode (ST Microelectronics)
  • STPSC406 - 600V power Schottky silicon carbide diode (ST Microelectronics)
  • STPSC606 - Schottky Barrier 600 V power Schottky silicon carbide diode (ST Microelectronics)
  • STPSC806 - Schottky Barrier 600 V power Schottky silicon carbide diode (ST Microelectronics)
  • STPS0520M - LOW DROP POWER SCHOTTKY RECTIFIER (ST Microelectronics)
  • STPS0520Z - SCHOTTKY RECTIFIERS (ST Microelectronics)
  • STPS0530Z - SCHOTTKY RECTIFIERS (ST Microelectronics)
  • STPS0540Z - (STPS0540Z / STPS0560Z) SCHOTTKY RECTIFIER (ST Microelectronics)
  • STPS0560Z - SCHOTTKY RECTIFIER (ST Microelectronics)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STPSC20H065C 650 V power Schottky silicon carbide diode A1 (1) A2 (3) K (2) A2 A1 K TO-220AB STPSC20H065CT A2 K A1 TO-247 STPSC20H065CW Features  No or negligible reverse recovery  Switching behavior independent of temperature  Dedicated to PFC applications  High forward surge capability Datasheet - production data Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Published: |