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STPSC2006CW - 600V power Schottky silicon carbide diode

Description

The SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 600 V rating.

Features

  • No or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • Particularly suitable in PFC boost diode function.

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Datasheet preview – STPSC2006CW

Datasheet Details

Part number STPSC2006CW
Manufacturer STMicroelectronics
File Size 75.08 KB
Description 600V power Schottky silicon carbide diode
Datasheet download datasheet STPSC2006CW Datasheet
Additional preview pages of the STPSC2006CW datasheet.

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Full PDF Text Transcription

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STPSC2006CW 600 V power Schottky silicon carbide diode Features ■ No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations in hard switching conditions. A1 K A2 A2 K A1 TO-247 STPSC2006CW Table 1.
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