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STPSC20H065C-Y - Automotive 650V power Schottky silicon carbide diode

Description

The SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Features

  • No or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • Dedicated to PFC.

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Datasheet preview – STPSC20H065C-Y

Datasheet Details

Part number STPSC20H065C-Y
Manufacturer STMicroelectronics
File Size 150.98 KB
Description Automotive 650V power Schottky silicon carbide diode
Datasheet download datasheet STPSC20H065C-Y Datasheet
Additional preview pages of the STPSC20H065C-Y datasheet.

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Full PDF Text Transcription

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STPSC20H065C-Y Automotive 650 V power Schottky silicon carbide diode A1 (1) A2 (3) K (2) A2 A1 K TO-220AB STPSC20H065CTY A2 K A1 TO-247 STPSC20H065CWY Features • No or negligible reverse recovery • Switching behavior independent of temperature • Dedicated to PFC applications • High forward surge capability • AEC-Q101 qualified • ECOPACK®2 compliant component • PPAP capable Datasheet - production data Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible.
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