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RB751V-40 - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

Description

Cathode Anode 12 S8 Top View Marking Code: "S8" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range Symbol V

Features

  • Small surface mounting type.
  • Low reverse current and low forward voltage.
  • High reliability.

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Datasheet Details

Part number RB751V-40
Manufacturer SEMTECH
File Size 121.51 KB
Description SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Datasheet download datasheet RB751V-40 Datasheet
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RB751V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features • Small surface mounting type • Low reverse current and low forward voltage • High reliability Applications • High speed switching PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 S8 Top View Marking Code: "S8" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.
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