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RB751CS-40 - Silicon Epitaxial Planar Schottky Barrier Diode

Description

Cathode Anode 1 52 Transparent top view Marking Code: 5 Simplified outline DFN1006-2B and symbol Absolute Maximum Ratings (Ta = 25℃) Parameter Peak Reverse Voltage Reverse Voltage Average rectified forward current HPeak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature CStorage Tempera

Features

  • Small surface mounting type.
  • Low forward voltage.
  • High reliability.

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Datasheet Details

Part number RB751CS-40
Manufacturer SEMTECH
File Size 434.81 KB
Description Silicon Epitaxial Planar Schottky Barrier Diode
Datasheet download datasheet RB751CS-40 Datasheet
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RB751CS-40 Silicon Epitaxial Planar Schottky Barrier Diode Features • Small surface mounting type • Low forward voltage • High reliability PINNING PIN 1 2 DESCRIPTION Cathode Anode 1 52 Transparent top view Marking Code: 5 Simplified outline DFN1006-2B and symbol Absolute Maximum Ratings (Ta = 25℃) Parameter Peak Reverse Voltage Reverse Voltage Average rectified forward current HPeak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature CStorage Temperature Range ECharacteristics at Ta = 25℃ Parameter TForward Voltage at IF = 1 mA Reverse Current Mat VR= 30 V Capacitance Between Terminals SEat VR= 1 V, f = 1 MHz Symbol VRM VR IF(AV) IFSM Tj Tstg Value 40 30 30 200 125 - 40 to + 125 Unit V V mA mA ℃ ℃ Symbol VF IR CT Typ. 2 Max. 0.37 0.
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