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RB715W - Schottky Barrier Diode

Features

  • Low current rectification Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current (t = 8.3 ms ) Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA Reverse Breakdown Voltage at IR = 10 µA Reverse Current at VR = 10 V Capacitance between Terminals at VR = 1 V, f = 1 MHz 3 12 Marking Code: 3D Symbol VRM VR IF(AV) IFSM Tj.

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Datasheet Details

Part number RB715W
Manufacturer SEMTECH
File Size 142.28 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB715W Datasheet
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Full PDF Text Transcription

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RB715W Schottky Barrier Diode Features • Low current rectification Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current (t = 8.3 ms ) Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA Reverse Breakdown Voltage at IR = 10 µA Reverse Current at VR = 10 V Capacitance between Terminals at VR = 1 V, f = 1 MHz 3 12 Marking Code: 3D Symbol VRM VR IF(AV) IFSM Tj Tstg Value 40 40 30 200 125 - 55 to + 125 Unit V V mA mA OC OC Symbol VF Min. - V(BR)R 40 IR - Ct - Typ. 2 Max. 0.37 1 - Unit V V µA pF SEMTECH ELECTRONICS LTD. ® Dated：23/11/2015 Rev:02 RB715W SEMTECH ELECTRONICS LTD.
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