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RB715W SCHOTTKY BARRIER DIODE
FEATURES:
Power dissipation PD: 200 mW (Tamb=25℃)
Collector current IF: 30 mA
Collector-base voltage VR: 40 V
Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
CIRCUIT:
SOT-523
1 3
2
MARKING: 3D
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance
Symbol V(BR) IR VF CD
Test conditions
IR= 100µA
VR=10V IF=1mA VR=1V, f=1MHz
MIN
MAX
UNIT
40 V
1 µA
0.
RB715W Datasheet
