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RB751S-40
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
for high speed switching and detection applications
Features • Small surface mounting type • Low reverse current and low forward voltage • High reliability
PINNING PIN 1 2
1
DESCRIPTION Cathode Anode
2
D
Top View Marking Code: "D" Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz, 1 Cycle) Junction Temperature Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
Forward Voltage at IF = 1 mA Reverse Current at VR = 30 V Capacitance Between Terminals at VR = 1 V, f = 1 MHz
Note: ESD sensitive product handling required.
RB751S-40 Datasheet
