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RB706F-40 - SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

Features

  • High reliability.
  • Low reverse current 3 12 Marking Code: ZA Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current (t = 8.3 ms) Junction Temperature Storage Temperature Range Symbol VRM VR IO IFSM Tj Tstg Value 45 40 30 200 125 - 55 to + 125 Unit V V mA mA OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA Reverse Current at VR = 10 V Reverse Bre.

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Datasheet Details

Part number RB706F-40
Manufacturer SEMTECH
File Size 214.24 KB
Description SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
Datasheet download datasheet RB706F-40 Datasheet
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Full PDF Text Transcription

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RB706F-40 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low current rectification Features • High reliability • Low reverse current 3 12 Marking Code: ZA Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current (t = 8.3 ms) Junction Temperature Storage Temperature Range Symbol VRM VR IO IFSM Tj Tstg Value 45 40 30 200 125 - 55 to + 125 Unit V V mA mA OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA Reverse Current at VR = 10 V Reverse Breakdown Voltage at IR = 10 µA Capacitance between Terminals at VR = 1 V, f = 1 MHz Symbol Min. Typ. Max. Unit VF - - 0.37 V IR - - 1 µA V(BR)R CT 45 - 2 -V - pF SEMTECH ELECTRONICS LTD.
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