Click to expand full text
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
SOT-323
RB706F-40 Schottky Barrier Diode
FEATURES z Small package z Low VF and low IR z High reliability
MAKING: 3J·
1 3
2
Maximum Ratings @Ta=25℃
Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Non-repetitive Peak Forward Surge Current@t=8.3ms Power dissipation
TJuhnercmtioanl RtoesAismtabniecnetfrom Junction temperature
Storage temperature
Solid dot = Green molding compound device,if none, the normal device.
Symbol VRM VR IO IFSM PD RθJA
Tj Tstg
Limit 45 40 30 200 200 500
125 -55+150
Unit V V mA mA mW
℃/W
℃ ℃
Electrical Ratings @Ta=25℃
Parameter
Symbol Min Typ Max Unit
Forward voltage Reverse current Capacitance between terminals
VF IR CT
0.37 V 1 μA
2 pF
www.