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RJK6036DP3-A0 - High Speed Power Switching MOS FET

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Description

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Features

  • Low on-resistance RDS(on) = 5.7  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C).
  • Low drive current.
  • High density mounting Outline.

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Datasheet Details

Part number RJK6036DP3-A0
Manufacturer Renesas
File Size 66.40 KB
Description High Speed Power Switching MOS FET
Datasheet download datasheet RJK6036DP3-A0 Datasheet
Additional preview pages of the RJK6036DP3-A0 datasheet.

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Full PDF Text Transcription

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RJK6036DP3-A0 600V - 2A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 5.7  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting Outline RENESAS Package code: PRSP0004ZB-A Package name: SOT-223 4 3 2 1 G Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current VGSS ID Note1 ID Note2 (pulse) IDR Note1 IDR Note2 (pulse) Channel temperature Tch Storage temperature Tstg Notes: 1. Limited Tch max.. Value at Tc = 25C 2. Pulse width limited by safe operating area. Preliminary Datasheet R07DS0841EJ0100 Rev.1.00 Jul 05, 2011 D 1. Gate 2. Drain 3. Source 4.
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