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RJK6034DPD-E0 - N-Channel Power MOSFET

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Description

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Features

  • Low on-resistance RDS(on) = 9.8  typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C).
  • Low leakage current.
  • High speed switching R07DS0553EJ0100 Rev.1.00 Oct 13, 2011 Outline.

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Datasheet Details

Part number RJK6034DPD-E0
Manufacturer Renesas
File Size 137.71 KB
Description N-Channel Power MOSFET
Datasheet download datasheet RJK6034DPD-E0 Datasheet
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Full PDF Text Transcription

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Preliminary Datasheet RJK6034DPD-E0 600 V - 1 A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 9.8  typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching R07DS0553EJ0100 Rev.1.00 Oct 13, 2011 Outline RENESAS Package code: PRSS0004ZJ-A (Package name : TO-252) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings www.DataSheet.co.kr (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. Pulse width limited by safe operating area 2. Value at Tc = 25C 3.
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