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RJK6006DPD - Silicon N Channel MOS FET High Speed Power Switching

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Features

  • Low on-state resistance RDS(on) = 1.4  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C).
  • High speed switching REJ03G1935-0100 Rev.1.00 Jun 01, 2010 Outline.

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Datasheet Details

Part number RJK6006DPD
Manufacturer Renesas Technology
File Size 101.13 KB
Description Silicon N Channel MOS FET High Speed Power Switching
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Preliminary www.DataSheet4U.com Datasheet RJK6006DPD Silicon N Channel MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 1.4  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C)  High speed switching REJ03G1935-0100 Rev.1.00 Jun 01, 2010 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4.
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