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RJK6034DPP-E0 - MOS FET

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Description

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Features

  • Low on-resistance RDS(on) = 9.8  typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C).
  • Low leakage current.
  • High speed switching Outline.

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Datasheet Details

Part number RJK6034DPP-E0
Manufacturer Renesas
File Size 98.93 KB
Description MOS FET
Datasheet download datasheet RJK6034DPP-E0 Datasheet
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Full PDF Text Transcription

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RJK6034DPP-E0 600V - 1A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 9.8  typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) G 1 23 Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation VDSS VGSS ID Note3 ID (pulse) Note1 IDR IDR Note1 (pulse) Pch Note2 Channel to case thermal impedance ch-c Channel temperature Tch Storage temperature Tstg Notes: 1. Pulse width limited by safe operating area 2. Value at Tc = 25C 3.
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