Datasheet4U Logo Datasheet4U.com

RJK6032DPD - MOS FET

Datasheet Summary

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • Low on-resistance RDS(on) = 3.3  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C).
  • Low drive current.
  • High density mounting R07DS0837EJ0300 Rev.3.00 Oct 05, 2012 Outline.

📥 Download Datasheet

Datasheet preview – RJK6032DPD

Datasheet Details

Part number RJK6032DPD
Manufacturer Renesas
File Size 106.40 KB
Description MOS FET
Datasheet download datasheet RJK6032DPD Datasheet
Additional preview pages of the RJK6032DPD datasheet.

📁 Similar Datasheet

  • RJK6002DPD - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
  • RJK6006DPD - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
  • RJK6009DPP - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
  • RJK6013DPE - Silicon N-Channel MOSFET (Renesas Technology)
  • RJK6014DPK - Silicon N-Channel MOSFET (Renesas Technology)
  • RJK6014DPK - N-Channel MOSFET (INCHANGE)
  • RJK6014DPP - Silicon N-Channel MOSFET (Renesas Technology)
  • RJK6015DPK - Silicon N-Channel MOSFET (Renesas Technology)
  • RJK6015DPK - N-Channel MOSFET (INCHANGE)
  • RJK6018DPK - Silicon N-Channel MOSFET (Renesas Technology)
Other Datasheets by Renesas

Full PDF Text Transcription

Click to expand full text
Preliminary Datasheet RJK6032DPD 600V - 3A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 3.3  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting R07DS0837EJ0300 Rev.3.00 Oct 05, 2012 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. S D G 12 3 Gate Drain Source Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. Pulse width limited by operating area. 2. STch = 25C, Tch  150C 3.
Published: |