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RJK6032DPH-E0 - MOS FET

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Description

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Features

  • Low on-resistance RDS(on) = 3.3  typ. (at ID = 1.0 A, VGS = 10 V, Ta = 25C).
  • Low drive current.
  • High density mounting R07DS0993EJ0100 Rev.1.00 Jan 23, 2013 Outline.

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Datasheet Details

Part number RJK6032DPH-E0
Manufacturer Renesas
File Size 123.75 KB
Description MOS FET
Datasheet download datasheet RJK6032DPH-E0 Datasheet
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Full PDF Text Transcription

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Preliminary Datasheet RJK6032DPH-E0 600V - 3A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 3.3  typ. (at ID = 1.0 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting R07DS0993EJ0100 Rev.1.00 Jan 23, 2013 Outline RENESAS Package code: PRSS0004ZJ-B (Package name: TO-251) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. STch = 25C, Tch  150C 3.
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