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RJK5012DPP-A0 - MOSFET

Features

  • Low on-resistance RDS(on) = 0.515  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C).
  • Low leakage current.
  • High speed switching.
  • Quality grade: Standard Outline.

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Datasheet preview – RJK5012DPP-A0

Datasheet Details

Part number RJK5012DPP-A0
Manufacturer Renesas
File Size 143.55 KB
Description MOSFET
Datasheet download datasheet RJK5012DPP-A0 Datasheet
Additional preview pages of the RJK5012DPP-A0 datasheet.

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Full PDF Text Transcription

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RJK5012DPP-A0 500V - 12A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.515  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching  Quality grade: Standard Outline RENESAS Package code: PRSS0003AP-A (Package name: TO-220FPA) D 12 3 G S Datasheet R07DS1427EJ0100 Rev.1.00 Jun.11.2020 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS 30 V Drain current ID Notes4 12 A Drain peak current ID (pulse)Notes1 24 A Body-drain diode reverse drain current IDR 12 A Body-drain diode reverse drain peak current IDR (pulse) Notes1 24 A Avalanche current IAP Notes3 4 A Avalanche energy EAR Notes3 0.
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