Datasheet4U Logo Datasheet4U.com

RJK5026DPP-M0 - N-Channel MOSFET

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • Low on-resistance RDS(on) = 1.35 Ω typ. (at ID = 3 A, VGS = 10 V, Ta = 25°C).
  • Low leakage current.
  • High speed switching Outline.

📥 Download Datasheet

Datasheet preview – RJK5026DPP-M0

Datasheet Details

Part number RJK5026DPP-M0
Manufacturer Renesas
File Size 92.36 KB
Description N-Channel MOSFET
Datasheet download datasheet RJK5026DPP-M0 Datasheet
Additional preview pages of the RJK5026DPP-M0 datasheet.

📁 Similar Datasheet

  • RJK5026DPP - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
  • RJK5026DPE - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
  • RJK5020DPK - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
  • RJK5002DJE - High Speed Power Switching MOS FET (Renesas Technology)
  • RJK5003DPD - Silicon N Channel Power MOS FET (Renesas Technology)
  • RJK5009DPP - Silicon N Channel Power MOS FET (Renesas Technology)
  • RJK5012DPE - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
  • RJK5012DPP - Silicon N-Channel MOSFET (Renesas Technology)
  • RJK5013DPE - Silicon N Channel Power MOS FET (Renesas Technology)
  • RJK5013DPK - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
Other Datasheets by Renesas

Full PDF Text Transcription

Click to expand full text
RJK5026DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 1.35 Ω typ. (at ID = 3 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) 1 23 G Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation VDSS VGSS IDNote4 ID Note1 (pulse) IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 Channel to case thermal impedance θch-c Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.
Published: |