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RJK5012DPE - Silicon N Channel MOS FET High Speed Power Switching

Description

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Features

  • Low on-resistance RDS(on) = 0.515  typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C).
  • Low leakage current.
  • High speed switching REJ03G1487-0300 Rev.3.00 May 12, 2010 Outline.

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Datasheet Details

Part number RJK5012DPE
Manufacturer Renesas Technology
File Size 109.94 KB
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet download datasheet RJK5012DPE Datasheet
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Preliminary www.DataSheet4U.com Datasheet RJK5012DPE Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.515  typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching REJ03G1487-0300 Rev.3.00 May 12, 2010 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain 1 G 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2.
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