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RJK5015DPM - Silicon N Channel MOS FET High Speed Power Switching

Features

  • Low on-resistance.
  • Low leakage current.
  • High speed switching REJ03G1753-0100 Rev.1.00 Oct 26, 2009 Outline.

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Datasheet Details

Part number RJK5015DPM
Manufacturer Renesas Technology
File Size 102.36 KB
Description Silicon N Channel MOS FET High Speed Power Switching
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www.DataSheet4U.com RJK5015DPM Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching REJ03G1753-0100 Rev.1.00 Oct 26, 2009 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) D G 1. Gate 2. Drain 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4.
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