Datasheet4U Logo Datasheet4U.com

RJK5026DPP-E0 - MOS FET

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • Low on-resistance RDS(on) = 1.35  typ. (at ID = 3 A, VGS = 10 V, Ta = 25C).
  • Low leakage current.
  • High speed switching R07DS0608EJ0100 Rev.1.00 Jun 21, 2012 Outline.

📥 Download Datasheet

Datasheet preview – RJK5026DPP-E0

Datasheet Details

Part number RJK5026DPP-E0
Manufacturer Renesas
File Size 117.90 KB
Description MOS FET
Datasheet download datasheet RJK5026DPP-E0 Datasheet
Additional preview pages of the RJK5026DPP-E0 datasheet.

📁 Similar Datasheet

  • RJK5026DPP - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
  • RJK5026DPE - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
  • RJK5020DPK - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
  • RJK5002DJE - High Speed Power Switching MOS FET (Renesas Technology)
  • RJK5003DPD - Silicon N Channel Power MOS FET (Renesas Technology)
  • RJK5009DPP - Silicon N Channel Power MOS FET (Renesas Technology)
  • RJK5012DPE - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
  • RJK5012DPP - Silicon N-Channel MOSFET (Renesas Technology)
  • RJK5013DPE - Silicon N Channel Power MOS FET (Renesas Technology)
  • RJK5013DPK - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
Other Datasheets by Renesas

Full PDF Text Transcription

Click to expand full text
Preliminary Datasheet RJK5026DPP-E0 500V - 6A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 1.35  typ. (at ID = 3 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching R07DS0608EJ0100 Rev.1.00 Jun 21, 2012 Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4.
Published: |