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NP82N06PDG - N-CHANNEL POWER MOS FET

Description

The NP82N06PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

typ.

1.

Features

  • Super low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A).
  • Low Ciss Ciss = 5700 pF TYP.

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Datasheet Details

Part number NP82N06PDG
Manufacturer Renesas
File Size 181.64 KB
Description N-CHANNEL POWER MOS FET
Datasheet download datasheet NP82N06PDG Datasheet

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N06PDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP82N06PDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP82N06PDG-E1-AY Note NP82N06PDG-E2-AY Note LEAD PLATING Pure Sn (Tin) Note See “TAPE INFORMATION” PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZP) typ. 1.5 g FEATURES • Super low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A) • Low Ciss Ciss = 5700 pF TYP.
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