• Part: NP82N03PUG
  • Description: N-CHANNEL POWER MOS FET
  • Manufacturer: Renesas
  • Size: 194.56 KB
Download NP82N03PUG Datasheet PDF
Renesas
NP82N03PUG
DESCRIPTION The NP82N03PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE TO-263 (MP-25ZP) FEATURES - Channel temperature 175 degree rating - Super low on-state resistance RDS(on) = 2.8 mΩ MAX. (VGS = 10 V, ID = 41 A) - Low Ciss: Ciss = 6050 p F TYP. (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±82 ±328 Total Power Dissipation (TA = 25°C) PT1 Total Power Dissipation (TC = 25°C) PT2 Channel Temperature Tch 175 Storage Temperature Repetitive Avalanche Current Note2 Repetitive Avalanche Energy Note2 Tstg - 55 to +175 IAR 47 EAR 221 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V V V A A W W °C °C A m J THERMAL RESISTANCE Channel to Case Thermal Resistance...