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NP82N04PDG - N-CHANNEL POWER MOS FET

Description

The NP82N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

typ.

Features

  • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 41 A).
  • Low Ciss Ciss = 6000 pF TYP.

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Datasheet Details

Part number NP82N04PDG
Manufacturer Renesas
File Size 217.06 KB
Description N-CHANNEL POWER MOS FET
Datasheet download datasheet NP82N04PDG Datasheet

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N04PDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP82N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING NP82N04PDG-E1-AY Pure Sn (Tin) NP82N04PDG-E2-AY PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZP) typ. 1.5 g FEATURES • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • Low Ciss Ciss = 6000 pF TYP.
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