NP82N04PDG
DESCRIPTION
The NP82N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
NP82N04PDG-E1-AY
Pure Sn (Tin)
NP82N04PDG-E2-AY
PACKING
Tape 800 p/reel
PACKAGE TO-263 (MP-25ZP) typ. 1.5 g
FEATURES
- Super low on-state resistance
RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 41 A)
- Low Ciss Ciss = 6000 p F TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1
ID(DC) ID(pulse)
±82 ±328
Total Power Dissipation (TC = 25°C)
PT1 143
Total Power Dissipation (TA = 25°C) PT2 1.8
Channel Temperature
Tch 175
Storage Temperature
Tstg
- 55 to +175
Repetitive Avalanche Current Note2
IAR 43
Repetitive Avalanche Energy Note2
EAR 185
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS =...
