Datasheet4U Logo Datasheet4U.com

NP82N04MDG - N-CHANNEL POWER MOS FET

Description

The NP82N04MDG and NP82N04NDG are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Logic level.
  • Super low on-state resistance RDS(on)1 = 4.2 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 41 A).
  • High current rating ID(DC) = ±82 A.
  • Low input capacitance Ciss = 6000 pF TYP.
  • Designed for automotive.

📥 Download Datasheet

Datasheet Details

Part number NP82N04MDG
Manufacturer Renesas
File Size 344.64 KB
Description N-CHANNEL POWER MOS FET
Datasheet download datasheet NP82N04MDG Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NP82N055CHE MOS FIELD EFFECT TRANSISTOR NEC
NP82N055DHE MOS FIELD EFFECT TRANSISTOR NEC
NP82N055EHE MOS FIELD EFFECT TRANSISTOR NEC
NP82N055KHE MOS FIELD EFFECT TRANSISTOR NEC
NP82N055MUG N-CHANNEL POWER MOS FET NEC

Other Datasheets by Renesas

Part Number Description
NP82N04MLG N-Channel MOSFET
NP82N04NDG N-CHANNEL POWER MOS FET
NP82N04NLG N-Channel MOSFET
NP82N04PDG N-CHANNEL POWER MOS FET
NP82N04PUG N-CHANNEL POWER MOS FET

Full PDF Text Transcription

Click to expand full text
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N04MDG, NP82N04NDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP82N04MDG and NP82N04NDG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP82N04MDG-S18-AY Note NP82N04NDG-S18-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 50 p/tube Note Pb-free (This product does not contain Pb in the external electrode.) PACKAGE TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g FEATURES • Logic level • Super low on-state resistance RDS(on)1 = 4.2 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • High current rating ID(DC) = ±82 A • Low input capacitance Ciss = 6000 pF TYP.
Published: |