NP82N06PLG
DESCRIPTION
The NP82N06PLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP82N06PLG-E1-AY NP82N06PLG-E2-AY
Note Note
LEAD PLATING Pure Sn (Tin)
PACKING Tape 800 p/reel
PACKAGE TO-263 (MP-25ZP)
Note Pb-free (This product does not contain Pb in the external electrode.)
FEATURES
- Super low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A)
- Low input capacitance Ciss = 5700 p F TYP.
- Built-in gate protection diode
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
60 ±20 ±82 ±270 143 1.8 175
- 55 to +175 37 137
V V A A W W °C °C A m J
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Current...
