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NP82N06NLG - N-CHANNEL POWER MOSFET

Download the NP82N06NLG datasheet PDF. This datasheet also covers the NP82N06MLG variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The NP82N06MLG and NP82N06NLG are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Logic level.
  • Built-in gate protection diode.
  • Super low on-state resistance RDS(on)1 = 7.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 9.7 mΩ MAX. (VGS = 5 V, ID = 41 A).
  • High current rating ID(DC) = ±82 A.
  • Low input capacitance Ciss = 5700 pF TYP.
  • Designed for automotive.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NP82N06MLG-Renesas.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Renesas

Part Number Description
NP82N06MLG N-CHANNEL POWER MOSFET
NP82N06PDG N-CHANNEL POWER MOS FET
NP82N03PUG N-CHANNEL POWER MOS FET
NP82N04MDG N-CHANNEL POWER MOS FET
NP82N04MLG N-Channel MOSFET

Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N06MLG, NP82N06NLG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP82N06MLG and NP82N06NLG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP82N06MLG-S18-AY Note NP82N06NLG-S18-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 50 p/tube Note Pb-free (This product does not contain Pb in the external electrode.) PACKAGE TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g FEATURES • Logic level • Built-in gate protection diode • Super low on-state resistance RDS(on)1 = 7.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 9.7 mΩ MAX. (VGS = 5 V, ID = 41 A) • High current rating ID(DC) = ±82 A • Low input capacitance Ciss = 5700 pF TYP.
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