NP82N055EHE
DESCRIPTION
These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP82N055CHE NP82N055DHE NP82N055EHE PACKAGE TO-220AB TO-262 TO-263 (MP-25ZJ) TO-263 (MP-25ZK)
FEATURES
- Channel temperature 175 degree rated
- Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A)
- Low Ciss: Ciss = 3500 p F TYP.
- Built-in gate protection diode 5
NP82N055KHE
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
55 ±20 ±82 ±300 1.8 163 175
- 55 to +175 72 / 49 / 17 51 / 240 / 289
V V A A W W °C °C A m J (TO-263) (TO-262)
Drain Current (pulse)
Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3
IAS EAS
Notes 1. Calculated constant...
