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2SK665 - Silicon MOS FETs

Download the 2SK665 datasheet PDF. This datasheet also covers the 2SK0665 variant, as both devices belong to the same silicon mos fets family and are provided as variant models within a single manufacturer datasheet.

Features

  • 0.3+0.1.
  • 0.0 3 0.15+0.10.
  • 0.05 1.25±0.10 (0.65) (0.65) 1.3±0.1 2.0±0.2 10° Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 20 8 100 200 150 150.
  • 55 to +150 Unit V V mA mA mW °C °C 1: Gate 2: Source 3: Drain 0 to 0.1 0.9±0.1 0.9+0.2.
  • 0.1 I Absolute Maximum Ratings (Ta = 25°C) EIAJ: SC-70 SMini3-G1 Pack.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK0665_PanasonicSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR NEC
2SK667 N-Channel MOSFET Transistor Inchange Semiconductor
2SK669 N-Channel MOSFET Sanyo Semicon Device
2SK600 N-Channel MOSFET Transistor Inchange Semiconductor
2SK602 N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by Panasonic

Part Number Description
2SK665 N-Channel MOSFET
2SK662 N-Channel MOSFET
2SK662 Silicon N-Channel Junction FET
2SK663 N-Channel MOSFET
2SK663 Silicon N-Channel Junction FET

Full PDF Text Transcription

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Silicon MOS FETs (Small Signal) 2SK0665 (2SK665) Silicon N-Channel MOS FET unit: mm (0.425) For switching I Features 0.3+0.1 –0.0 3 0.15+0.10 –0.05 1.25±0.10 (0.65) (0.65) 1.3±0.1 2.0±0.2 10° Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 20 8 100 200 150 150 −55 to +150 Unit V V mA mA mW °C °C 1: Gate 2: Source 3: Drain 0 to 0.1 0.9±0.1 0.9+0.2 –0.
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