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Silicon Junction FETs (Small Signal)
2SK0662 (2SK662)
Silicon N-Channel Junction FET
For low-frequency amplification
unit: mm
(0.425)
I Features
0.3+0.1 –0.0 3
0.15+0.10 –0.05
G High mutual conductance gm G Low noise type G S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
1.25±0.10
2.1±0.1 5°
1
2
(0.65) (0.65) 1.3±0.1
I Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Gate to Drain voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO ID IG PD Tj Tstg Ratings 30 −30 20 10 150 125 −55 to +125 Unit V V mA mA mW °C °C
2.0±0.2 10°
1: Source 2: Drain 3: Gate
0 to 0.1
0.9±0.1
0.9+0.2 –0.
2SK662 Datasheet
