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Silicon Junction FETs (Small Signal)
2SK663
Silicon N-Channel Junction FET
For low-frequency amplification For switching
2.1±0.1 0.425 1.25±0.1 0.425
unit: mm
q Low noise-figure (NF) q High gate to drain voltage VGDO q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
0.65
1
2.0±0.2
1.3±0.1
0.65
3
2
0.2
0.9±0.1
0 to 0.1
Parameter Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature
Symbol VDSX VGDO VGSO ID IG PD Tj Tstg
Ratings 55 −55 −55 30 10 150 125 −55 to +125
Unit V V V mA mA mW °C °C
0.7±0.1
s Absolute Maximum Ratings (Ta = 25°C)
0.2±0.
2SK663 Datasheet
