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2SK664 - Silicon N-Channel MOS FET

Download the 2SK664 datasheet PDF. This datasheet also covers the 2SK0664 variant, as both devices belong to the same silicon n-channel mos fet family and are provided as variant models within a single manufacturer datasheet.

Features

  • (0.425) 0.3+0.1.
  • 0.0 3 0.15+0.10.
  • 0.05 1.25±0.10 (0.65) (0.65) 1.3±0.1 2.0±0.2 10° Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 150 150.
  • 55 to +150 Unit V V mA mA mW °C °C 1: Gate 2: Source 3: Drain 0 to 0.1 0.9±0.1 0.9+0.2.
  • 0.1 I Absolute Maximum Ratings (Ta = 25°C) EIAJ:.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK0664_PanasonicSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SK664
Manufacturer Panasonic
File Size 76.12 KB
Description Silicon N-Channel MOS FET
Datasheet download datasheet 2SK664 Datasheet

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Other Datasheets by Panasonic

Part Number Description
2SK664 N-Channel MOSFET
2SK662 N-Channel MOSFET
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2SK663 N-Channel MOSFET
2SK663 Silicon N-Channel Junction FET

Full PDF Text Transcription

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Silicon MOS FETs (Small Signal) 2SK0664 (2SK664) Silicon N-Channel MOS FET unit: mm For switching I Features (0.425) 0.3+0.1 –0.0 3 0.15+0.10 –0.05 1.25±0.10 (0.65) (0.65) 1.3±0.1 2.0±0.2 10° Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 150 150 −55 to +150 Unit V V mA mA mW °C °C 1: Gate 2: Source 3: Drain 0 to 0.1 0.9±0.1 0.9+0.2 –0.
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