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Silicon MOS FETs (Small Signal)
2SK664
Silicon N-Channel MOS FET
For switching
unit: mm
2.1±0.1
s Features
q High-speed switching q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
0.65
0.425
1.25±0.1
0.425
1
2.0±0.2
1.3±0.1
0.65
3
2
0.9±0.1
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature
Symbol VDSS VGSO ID IDP PD Tch Tstg
Ratings 50 8 100 200 150 150 −55 to +150
Unit V V mA mA mW °C °C
0.7±0.1
0 to 0.1
0.2±0.
2SK664 Datasheet
