Click to expand full text
Silicon Junction FETs (Small Signal)
2SK0663 (2SK663)
Silicon N-Channel Junction FET
For low-frequency amplification For switching
0.3+0.1 –0.0
unit: mm
(0.425)
0.15+0.10 –0.05
I Features
3
(0.65) (0.65) 1.3±0.1 2.0±0.2
I Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO VGSO ID IG PD Tj Tstg Ratings 55 −55 −55 30 10 150 125 −55 to +125 Unit V V V mA mA mW °C °C
10°
1: Source 2: Drain 3: Gate
0 to 0.1
0.9±0.1
0.9+0.2 –0.
2SK663 Datasheet
