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Silicon Junction FETs (Small Signal)
2SK662
Silicon N-Channel Junction FET
For low-frequency amplification
unit: mm
2.1±0.1
s Features
q High mutual conductance gm q Low noise type q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
0.65
0.425
1.25±0.1
0.425
1
2.0±0.2
1.3±0.1
0.65
3
2
s Absolute Maximum Ratings (Ta = 25°C)
0.2
Parameter Drain to Source voltage Gate to Drain voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature
Symbol VDSX VGDO ID IG PD Tj Tstg
Ratings 30 −30 20 10 150 125 −55 to +125
Unit V V mA mA mW °C °C
1: Source 2: Drain 3: Gate
0.9±0.1
0.7±0.1
0 to 0.1
0.2±0.
2SK662 Datasheet
