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Silicon MOS FETs (Small Signal)
2SK665
Silicon N-Channel MOS FET
For switching
unit: mm
2.1±0.1
s Features
q High-speed switching q Small drive current owing to high input inpedance q High electrostatic breakdown voltage
0.65
0.425
1.25±0.1
0.425
1
2.0±0.2
1.3±0.1
0.65
3
2
0.9±0.1
Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature
Symbol VDS VGSO ID IDP PD Tch Tstg
Ratings 20 8 100 200 150 150 −55 to +150
Unit V V mA mA mW °C °C
0.7±0.1
0 to 0.1
0.2±0.
2SK665 Datasheet
