Download the FODM8801B datasheet PDF.
This datasheet also covers the FODM8801A variant, as both devices belong to the same high-temperature phototransistor optocoupler family and are provided as variant models within a single manufacturer datasheet.
General Description
In the OptoHiT series, the FODM8801 is a first
of
kind
phototransistor, utilizing onsemi’s leading
edge proprietary process technology to achieve high operating temperature characteristics, up to 125°C.
coupler consists of an aluminum gallium arsenide (AlGaAs
Key Features
Utilizing Proprietary Process Technology to Achieve High Operating
Temperature: Up to 125°C.
Guaranteed Current Transfer Ratio (CTR)
Specifications Across Full Temperature Range.
Excellent CTR Linearity at High.
Temperature.
CTR at Very Low Input Current, IF.
High Isolation Voltage Regulated by Safety Agency:
C.
UL / UL1577, 3750 VACRMS for 1 Minute and DIN EN/IEC60747.
Full PDF Text Transcription for FODM8801B (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
FODM8801B. For precise diagrams, and layout, please refer to the original PDF.
DATA SHEET www.onsemi.com OptoHiTE Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package HALF−PITCH MINI−FLAT MFP4 2.5 x 4.4, 1.27P C...
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h Mini-Flat 4-Pin Package HALF−PITCH MINI−FLAT MFP4 2.5 x 4.4, 1.27P CASE 100AL FODM8801A, FODM8801B, FODM8801C Description In the OptoHiT series, the FODM8801 is a first−of−kind phototransistor, utilizing onsemi’s leading−edge proprietary process technology to achieve high operating temperature characteristics, up to 125°C. The opto−coupler consists of an aluminum gallium arsenide (AlGaAs) infrared light−emitting diode (LED) optically coupled to a phototransistor, available in a compact half−pitch, mini− flat, 4−pin package. It delivers high current transfer ratio at very low input current. The input−output isolation volt
FODM8801B Datasheet
