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FODM217 - Phototransistor Optocoupler

Key Features

  • Current Transfer Ratio Ranges from 20 to 600% at IF = ±1 mA, VCE = 5 V, TA = 25°C.
  • FODM214.
  • 20 to 400%.
  • FODM214A.
  • 50 to 250% at IF = 5 mA, VCE = 5 V, TA = 25°C.
  • FODM217A.
  • 80 to 160%.
  • FODM217B.
  • 130 to 260%.
  • FODM217C.
  • 200 to 400%.
  • FODM217D.
  • 300 to 600%.
  • Safety and Regulatory Approvals:.
  • UL1577, 3750 VACRMS for 1 min.
  • DIN EN/IEC60747.
  • 5.
  • 5, 5.

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Datasheet Details

Part number FODM217
Manufacturer onsemi
File Size 240.68 KB
Description Phototransistor Optocoupler
Datasheet download datasheet FODM217 Datasheet

Full PDF Text Transcription for FODM217 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FODM217. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET www.onsemi.com Single Channel, AC/DC Sensing Input, Phototransistor Optocoupler In Half-Pitch Mini-Flat 4-Pin Package FODM214, FODM217 Series The FODM217 serie...

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itch Mini-Flat 4-Pin Package FODM214, FODM217 Series The FODM217 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. The FODM214 series consist of two gallium arsenide infrared emitting diodes connected in inverse parallel for AC operation. Both were built in a compact, half−pitch, mini−flat, 4−pin package. The lead pitch is 1.27 mm.

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