FODM291 - Phototransistor Optocoupler

onsemi

Key Features

Current Transfer Ratio Ranges from 80 to 600% at IF = 5 mA, VCE = 5 V, TA = 25°C.
FODM291A.
80 to 160%.
FODM291B.
130 to 260%.
FODM291C.
200 to 400%.
FODM291D.
300 to 600%.
Safety and Regulatory Approvals:.
UL1577, 3750 VACRMS for 1 min.
DIN EN/IEC60747.
5.
5, 565 V Peak Working Insulation Voltage (Pending).
Applicable to Infrared Ray Reflow, 260°C Typical Applicati.

FODM291 phototransistor optocoupler by onsemi - Datasheet Preview

Datasheet Details

Part number	FODM291
Manufacturer	onsemi
File Size	502.32 KB
Description	Phototransistor Optocoupler
Datasheet	FODM291 Datasheet

Full PDF Text Transcription for FODM291 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FODM291. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET www.onsemi.com Single Channel, DC Sensing Input, Phototransistor Optocoupler In Half-Pitch Mini-Flat 4-Pin Package FODM291 Series The FODM291 series consist of...

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h Mini-Flat 4-Pin Package FODM291 Series The FODM291 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. It built in a compact, half−pitch, mini−flat, 4−pin package. The lead pitch is 1.27 mm.

More Datasheets from onsemi

Part Number	Description
FODM291A	Phototransistor Optocoupler
FODM291B	Phototransistor Optocoupler
FODM291C	Phototransistor Optocoupler
FODM291D	Phototransistor Optocoupler
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