FODM181A - Phototransistor Optocoupler

onsemi

Key Features

Current Transfer Ratio Ranges from 20 to 600%.
at IF = 5 mA, VCE = 5 V, TA = 25°C.
FODM181A.
80 to 160%.
FODM181B.
130 to 260%.
FODM181C.
200 to 400%.
FODM181D.
300 to 600%.
Safety and Regulatory Approvals:.
UL1577, 3750 VACRMS for 1 min.
DIN EN/IEC60747.
5.
5, 565 V Peak Working Insulation Voltage (Pending).
Applicable to Infrared Ray Reflow, 260°C Typical.

FODM181A phototransistor optocoupler by onsemi - Datasheet Preview

Datasheet Details

Part number	FODM181A
Manufacturer	onsemi
File Size	378.79 KB
Description	Phototransistor Optocoupler
Datasheet	FODM181A Datasheet

Full PDF Text Transcription for FODM181A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FODM181A. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET www.onsemi.com Single Channel, DC Sensing Input, Phototransistor Optocoupler In Full-Pitch Mini-Flat 4-Pin Package Product Preview FODM181 Series The FODM181 s...

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h Mini-Flat 4-Pin Package Product Preview FODM181 Series The FODM181 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. It built in a compact, half−pitch, mini−flat, 4−pin package. The lead pitch is 2.54 mm.

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