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FODM214 - Phototransistor Optocoupler

Download the FODM214 datasheet PDF. This datasheet also covers the FODM217 variant, as both devices belong to the same phototransistor optocoupler family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Current Transfer Ratio Ranges from 20 to 600% at IF = ±1 mA, VCE = 5 V, TA = 25°C.
  • FODM214.
  • 20 to 400%.
  • FODM214A.
  • 50 to 250% at IF = 5 mA, VCE = 5 V, TA = 25°C.
  • FODM217A.
  • 80 to 160%.
  • FODM217B.
  • 130 to 260%.
  • FODM217C.
  • 200 to 400%.
  • FODM217D.
  • 300 to 600%.
  • Safety and Regulatory Approvals:.
  • UL1577, 3750 VACRMS for 1 min.
  • DIN EN/IEC60747.
  • 5.
  • 5, 5.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FODM217-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number FODM214
Manufacturer onsemi
File Size 240.68 KB
Description Phototransistor Optocoupler
Datasheet download datasheet FODM214 Datasheet

Full PDF Text Transcription for FODM214 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FODM214. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET www.onsemi.com Single Channel, AC/DC Sensing Input, Phototransistor Optocoupler In Half-Pitch Mini-Flat 4-Pin Package FODM214, FODM217 Series The FODM217 serie...

View more extracted text
itch Mini-Flat 4-Pin Package FODM214, FODM217 Series The FODM217 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. The FODM214 series consist of two gallium arsenide infrared emitting diodes connected in inverse parallel for AC operation. Both were built in a compact, half−pitch, mini−flat, 4−pin package. The lead pitch is 1.27 mm.

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