Download the FODM291C datasheet PDF.
This datasheet also covers the FODM291 variant, as both devices belong to the same phototransistor optocoupler family and are provided as variant models within a single manufacturer datasheet.
Key Features
Current Transfer Ratio Ranges from 80 to 600%
at IF = 5 mA, VCE = 5 V, TA = 25°C.
FODM291A.
80 to 160%.
FODM291B.
130 to 260%.
FODM291C.
200 to 400%.
FODM291D.
300 to 600%.
Safety and Regulatory Approvals:.
UL1577, 3750 VACRMS for 1 min.
DIN EN/IEC60747.
5.
5, 565 V Peak Working Insulation Voltage
(Pending).
Applicable to Infrared Ray Reflow, 260°C
Typical Applicati.
Full PDF Text Transcription for FODM291C (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
FODM291C. For precise diagrams, and layout, please refer to the original PDF.
DATA SHEET www.onsemi.com Single Channel, DC Sensing Input, Phototransistor Optocoupler In Half-Pitch Mini-Flat 4-Pin Package FODM291 Series The FODM291 series consist of...
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h Mini-Flat 4-Pin Package FODM291 Series The FODM291 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. It built in a compact, half−pitch, mini−flat, 4−pin package. The lead pitch is 1.27 mm.
FODM291C Datasheet
