Download the FODM181D datasheet PDF.
This datasheet also covers the FODM181A variant, as both devices belong to the same phototransistor optocoupler family and are provided as variant models within a single manufacturer datasheet.
Key Features
Current Transfer Ratio Ranges from 20 to 600%.
at IF = 5 mA, VCE = 5 V, TA = 25°C.
FODM181A.
80 to 160%.
FODM181B.
130 to 260%.
FODM181C.
200 to 400%.
FODM181D.
300 to 600%.
Safety and Regulatory Approvals:.
UL1577, 3750 VACRMS for 1 min.
DIN EN/IEC60747.
5.
5, 565 V Peak Working Insulation Voltage
(Pending).
Full PDF Text Transcription for FODM181D (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
FODM181D. For precise diagrams, and layout, please refer to the original PDF.
DATA SHEET www.onsemi.com Single Channel, DC Sensing Input, Phototransistor Optocoupler In Full-Pitch Mini-Flat 4-Pin Package Product Preview FODM181 Series The FODM181 s...
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h Mini-Flat 4-Pin Package Product Preview FODM181 Series The FODM181 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. It built in a compact, half−pitch, mini−flat, 4−pin package. The lead pitch is 2.54 mm.
FODM181D Datasheet
