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FDME1034CZT - Dual-Channel MOSFET

General Description

This device is designed specifically as a single package solution for a DC DC ‘Switching’ MOSFET in cellular handset and other ultra

portable applications.

Key Features

  • an independent N.
  • Channel & P.
  • Channel MOSFET with low on.
  • state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. The MicroFETt 1.6x1.6 Thin package offers exceptional thermal performance for it’s physical size and is well suited to switching and linear mode.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Complementary, POWERTRENCH) N-Channel: 20 V, 3.8 A, 66 mW P-Channel: -20 V, -2.6 A, 142 mW FDME1034CZT General Description This device is designed specifically as a single package solution for a DC−DC ‘Switching’ MOSFET in cellular handset and other ultra−portable applications. It features an independent N−Channel & P−Channel MOSFET with low on−state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. The MicroFETt 1.6x1.6 Thin package offers exceptional thermal performance for it’s physical size and is well suited to switching and linear mode applications. Features Q1: N−Channel  Max RDS(on) = 66 mW at VGS = 4.5 V, ID = 3.4 A  Max RDS(on) = 86 mW at VGS = 2.