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FDME410NZT - N-Channel MOSFET

General Description

Max rDS(on) = 26 mΩ at VGS = 4.5 V, ID = 7 A Max rDS(on) = 31 mΩ at VGS = 2.5 V, ID = 6 A Max rDS(on) = 39 mΩ at VGS = 1.8 V, ID = 5 A Max rDS(on) = 53 mΩ at VGS = 1.5 V, ID = 4 A Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin

Key Features

  • General.

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FDME410NZT N-Channel PowerTrench® MOSFET October 2013 FDME410NZT N-Channel PowerTrench® MOSFET 20 V, 7 A, 26 mΩ Features General Description „ Max rDS(on) = 26 mΩ at VGS = 4.5 V, ID = 7 A „ Max rDS(on) = 31 mΩ at VGS = 2.5 V, ID = 6 A „ Max rDS(on) = 39 mΩ at VGS = 1.8 V, ID = 5 A „ Max rDS(on) = 53 mΩ at VGS = 1.5 V, ID = 4 A „ Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin „ Free from halogenated compounds and antimony oxides „ HBM ESD protection level > 1800V (Note3) „ RoHS Compliant This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.