FDME1024NZT - Dual N-Channel Power Trench MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDME1024NZT
Manufacturer	Fairchild Semiconductor
File Size	419.85 KB
Description	Dual N-Channel Power Trench MOSFET
Datasheet	FDME1024NZT Datasheet
Additional preview pages of the FDME1024NZT datasheet.

Product details

Description

This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultraportable applications.

Features

Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A.
Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A.
Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A.
Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A.
Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin.
Free from halogenated compounds and antimony oxides.
HBM ESD protection level > 1600V (Note3).
RoHS Compliant General.

📁 Similar Datasheet

FDME905PT - P-Channel MOSFET (ON Semiconductor)
FDME910PZT - P-Channel MOSFET (ON Semiconductor)
FDME910PZT-P - P-Channel MOSFET (ON Semiconductor)
FDME910PZT-P-Q - P-Channel MOSFET (ON Semiconductor)
FDM-2B - FDM-2B (ETC)
FDM100-0045SP - Buck Chopper (IXYS Corporation)
FDM21-05QC - Power MOSFET (IXYS Corporation)
FDM3622 - N-Channel MOSFET (ON Semiconductor)

Other Datasheets by Fairchild Semiconductor

FDME1023PZT - Dual P-Channel PowerTrench MOSFET
FDME1034CZT - Complementary PowerTrench MOSFET
FDME410NZT - N-Channel MOSFET
FDME430NT - N-Channel PowerTrench MOSFET
FDME510PZT - MOSFET
FDME820NZT - MOSFET

Published: Jun 29, 2010 |