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FDME1024NZT - Dual N-Channel Power Trench MOSFET

General Description

This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultraportable applications.

Key Features

  • Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A.
  • Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A.
  • Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A.
  • Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A.
  • Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin.
  • Free from halogenated compounds and antimony oxides.
  • HBM ESD protection level > 1600V (Note3).
  • RoHS Compliant General.

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www.DataSheet4U.com FDME1024NZT Dual N-Channel Power Trench® MOSFET December 2009 FDME1024NZT Dual N-Channel Power Trench® MOSFET 20 V, 3.4 A, 66 mΩ Features „ Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A „ Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A „ Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A „ Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A „ Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin „ Free from halogenated compounds and antimony oxides „ HBM ESD protection level > 1600V (Note3) „ RoHS Compliant General Description This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultraportable applications.