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FDME430NT - N-Channel PowerTrench MOSFET

General Description

Max rDS(on) = 40 mΩ at VGS = 4.5 V, ID = 6 A Max rDS(on) = 51 mΩ at VGS = 2.5 V, ID = 5 A Max rDS(on) = 71 mΩ at VGS = 1.8 V, ID = 4 A Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin Free from halogenated compounds and antimony

Key Features

  • General.

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FDME430NT N-Channel PowerTrench® MOSFET October 2013 FDME430NT N-Channel PowerTrench® MOSFET 30 V, 6 A, 40 mΩ Features General Description „ Max rDS(on) = 40 mΩ at VGS = 4.5 V, ID = 6 A „ Max rDS(on) = 51 mΩ at VGS = 2.5 V, ID = 5 A „ Max rDS(on) = 71 mΩ at VGS = 1.8 V, ID = 4 A „ Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin „ Free from halogenated compounds and antimony oxides „ RoHS Compliant This single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench® process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET leadframe. Applications „ Li-lon Battery Pack „ Baseband Switch „ Load Switch „ DC-DC Conversion G D Pin 1 D S S D D DD DD GS BOTTOM MicroFET 1.6x1.