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FDME1024NZT - Dual N-Channel MOSFET

General Description

This Device is Designed Specifically as a Single Package Solution for Dual Switching Requirement in cellular handset and other Ultra

Portable Applications.

Key Features

  • two independent N.
  • Channel MOSFETs with low on.
  • state resistance for minimum conduction losses. The MicroFET™ 1.6x1.6 Thin package offers Exceptional Thermal Performance for it’s physical size and is well suited to switching and linear mode.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Dual, N-Channel, POWERTRENCH) 20 V, 3.8 A, 66 mW FDME1024NZT Description This Device is Designed Specifically as a Single Package Solution for Dual Switching Requirement in cellular handset and other Ultra−Portable Applications. It features two independent N−Channel MOSFETs with low on−state resistance for minimum conduction losses. The MicroFET™ 1.6x1.6 Thin package offers Exceptional Thermal Performance for it’s physical size and is well suited to switching and linear mode applications. Features • Max RDS(on) = 66 mW at VGS = 4.5 V, ID = 3.4 A • Max RDS(on) = 86 mW at VGS = 2.5 V, ID = 2.9 A • Max RDS(on) = 113 mW at VGS = 1.8 V, ID = 2.5 A • Max RDS(on) = 160 mW at VGS = 1.5 V, ID = 2.1 A • Low Profile 0.55 mm Maximum − in the New Package MicroFET 1.6x1.