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FDME905PT - P-Channel MOSFET

General Description

switching in cellular handset and other ultraportable applications.

Key Features

  • a MOSFET with low on.
  • state resistance. The MicroFETt 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode.

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Datasheet Details

Part number FDME905PT
Manufacturer onsemi
File Size 273.33 KB
Description P-Channel MOSFET
Datasheet download datasheet FDME905PT Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – P-Channel POWERTRENCH) -12 V, -8 A, 22 mW FDME905PT General Description This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on−state resistance. The MicroFETt 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications. Features  Max RDS(on) = 22 mW at VGS = −4.5 V, ID = −8 A  Max RDS(on) = 26 mW at VGS = −2.5 V, ID = −7.3 A  Max RDS(on) = 97 mW at VGS = −1.8 V, ID = −3.8 A  Low Profile: 0.55 mm Maximum in the New Package MicroFET 1.6x1.